EPC Space LLC of Haverhill, MA, USA has launched the EPC7019G, a 40V, 4mΩ, 530Apulsed radiation-hardened enhancement-mode gallium nitride (GaN) power transistor that is claimed to be lower in cost and a more efficient solution than the nearest comparable rad-hard (RH) silicon MOSFET...
Source: http://www.semiconductor-today.com/news ... 0422.shtml