Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has announced availability of the EPC2366, a 40V, 0.8mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC–DC converters and synchronous rectifiers. Engineering samples are available for qualified designs...
Source: https://www.semiconductor-today.com/new ... 0525.shtml