Infineon Technologies AG of Munich, Germany is introducing the CoolGaN bidirectional switch (BDS) 650V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon's robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN technology. The device serves as a highly efficient replacement for traditional back-to-back configurations commonly used in converters...
Source: https://www.semiconductor-today.com/new ... 0525.shtml