Guerrilla RF Inc (GRF) of Greensboro, NC, USA — a provider of radio-frequency (RF) and microwave communication solutions for wireless OEMs — has released the GRF5607 and GRF5608, the first in a new class of ½W linear power amplifiers being developed. The indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) amplifiers were designed specifically for 5G wireless infrastructure applications requiring exceptional native linearity over temperature extremes of –40°C to 85°C...
Source: https://www.semiconductor-today.com/new ... 0623.shtml