SCT GlobalFoundries gains $35m US Government funding to accelerate 200mm GaN-on-Si chip production

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SCT GlobalFoundries gains $35m US Government funding to accelerate 200mm GaN-on-Si chip production

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GlobalFoundries (GF) of Malta, NY, USA (which has operations in Singapore, Germany and the USA) has been awarded $35m in federal funding from the US government to accelerate the manufacturing of its gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. The funding brings GF closer to large-scale production of GaN chips, whose ability to handle high voltages and temperatures enable “game-changing” performance and efficiency in 5G and 6G cellular communications for infrastructure and handsets, automotive and industrial Internet of Things (IoT), as well as power grids and other critical infrastructure...

Source: https://www.semiconductor-today.com/new ... 1023.shtml
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