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Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — says that Inventchip of Shanghai, China, a provider of silicon carbide (SiC) power devices and ICs, has demonstrated a 2.5kW GaN-based CCM totem-pole PFC reference design using CGD’s ICeGaN gallium nitride ICs...

Source: https://www.semiconductor-today.com/new ... 0525.shtml