Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has been named as one of the winners of Hyundai’s Open Innovation Challenge on the future of sporty driving. Out of nearly 50 companies, CGD’s one-chip ICeGaN solution has been selected for its robustness and ease of use, showing high potential for utilization in power modules for EV traction inverters. This technology enables GaN to be considered as a cost-effective alternative to expensive silicon carbide (SiC) solutions in the high-power EV inverter market, says CGD...
Source: https://www.semiconductor-today.com/new ... 1225.shtml