SE Sapphire Surface Modification Enables Wafer-Scale 2D Semiconductor Growth (Peking U., CAS et al.)
Posted: Fri Aug 28, 2026 5:28 pm
Researchers from Peking University, Chinese Academy of Sciences et al. published a technical paper titled “Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.” Abstract Excerpt: The paper presents a “homo-metal-element (W/Mo and Al) surface modification strategy of commercial C/M sapphire” and demonstrates “2-inch scale monolayer WS2 or MoS2 single-crystal wafers.” Find the technical paper here. August 2026. Wang, Jialong, Yihao Zheng, Qingsheng Zeng, Yuhang Jing, You Peng, Tong Zhou, Li Yin, et al. “Homo-Metal-Element Mediated Surface Modification of Sapphire for Robust Epitaxy of Wafer-Scale Single-Crystalline 2D Semiconductors.” Nature Communications, 2026. https://doi.org/10.1038/s41467-026-77131-w. Open Access. The post Sapphire Surface Modification Enables Wafer-Scale 2D Semiconductor Growth (Peking U., CAS et al.) appeared first on Semiconductor Engineering.
Source: https://semiengineering.com/sapphire-su ... cas-et-al/
Source: https://semiengineering.com/sapphire-su ... cas-et-al/