Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland has announced a 20-year limited...
Sandia National Laboratories has fabricated and tested a gallium nitride (GaN)-based electronic device that can shunt excess electricity within a few...
Infineon Technologies AG of Munich, Germany has launched a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use...
Wolfspeed Inc of Durham, NC, USA – which makes silicon carbide materials as well as silicon carbide (SiC) and gallium nitride (GaN) power-switching &...
Riber S.A. of Bezons, France – which designs and makes molecular beam epitaxy (MBE) systems and evaporators – has received an order from EPIR Inc of...
For fourth-quarter 2021, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €180.9m (the highest for...
For fourth-quarter 2021, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and...
Engineered substrate manufacturer Soitec has announced a new fabrication facility at its headquarters in Bernin, near Grenoble, France, primarily to...
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