Japan-based power semiconductor maker ROHM Co Ltd has developed the BM3G0xxMUV-LB series of EcoGaN power-stage ICs with built-in 650V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and gate driver, optimized for primary power supplies (AC-DC, PFC circuits) inside industrial applications (such as data servers and office automation devices) and consumer applications (such as home appliances, AC adapters, PCs, TVs, refrigerators, and air-conditioners)...
Source: https://www.semiconductor-today.com/new ... 0823.shtml