At a worldwide launch event at the Marriot Taipei in Taiwan, gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA unveiled GaNSafe, a new, high-performance wide-bandgap power platform. Navitas has optimized its fourth-generation GaN technology for demanding, high-power applications in data centers, solar/energy storage and electric vehicle (EV) markets, where efficiency, power density, and robust and reliable operation are critical...
Source: https://www.semiconductor-today.com/new ... 0923.shtml