SCT Mitsubishi Electric and Nexperia to co-develop SiC power semiconductors

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SCT Mitsubishi Electric and Nexperia to co-develop SiC power semiconductors

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Tokyo-based Mitsubishi Electric Corp is entering into a strategic partnership with discrete device designer and manufacturer Nexperia B.V. of Nijmegen, The Netherlands (a subsidiary of Wingtech Technology Co Ltd) to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips that Nexperia will use to develop SiC discrete devices...

Source: https://www.semiconductor-today.com/new ... 1123.shtml
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