Infineon Technologies AG of Munich, Germany has expanded its CoolSiC 1200V and 2000V MOSFET module families with a new industry-standard package. The proven 62mm device is designed in half-bridge topology and is based on the recently introduced M1H silicon carbide (SiC) MOSFET technology. The package enables the use of SiC for mid-power applications from 250kW – where silicon reaches the limits of power density with insulated-gate bipolar transistor (IGBT) technology. Compared to a 62mm IGBT module, the list of applications now additionally includes solar, server, energy storage, electric vehicle (EV) charger, traction, commercial induction cooking and power conversion systems...
Source: https://www.semiconductor-today.com/new ... 1123.shtml