Oxford Instruments Plasma Technology (OIPT) of Yatton, near Bristol, UK says that it has received significant orders for plasma atomic layer deposition (ALD) and atomic layer etch (ALE) systems for gallium nitride (GaN) high-electron-mobility transistor (HEMT) device production from several market-leading Japanese foundries. The systems will support high-growth GaN power electronics and radio frequency markets, with consumer fast-charging and data-center applications at the forefront for power electronics, and 5G/6G communication applications for the RF market...
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