A research team led by associate professor Jianbo Liang and professor Naoteru Shigekawa of the Graduate School of Engineering at Japan’s Osaka Metropolitan University has fabricated gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using diamond as a substrate (‘High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes’, published in ‘Small’ DOI: 10.1002/smll.202305574). ..
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