Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced its new portfolio of Gen-3 ‘Fast’ (G3F) 650V and 1200V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data-center power supplies, on-board chargers (OBCs), fast electric vehicle (EV) roadside super-chargers, and solar/energy-storage systems (ESS). The broad portfolio spans industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications...
Source: https://www.semiconductor-today.com/new ... 0624.shtml