Both molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) reactors operate in cleanroom environments and use the same set of metrology tools for wafer characterization. Solid-source MBE uses high-purity, elemental precursors heated in effusion cells to create a molecular beam to enable deposition (with liquid nitrogen used for cooling). In contrast, MOCVD is a chemical vapor process, using ultra-pure, gaseous sources to enable deposition, and requires toxic gas handing and abatement. Both techniques can produce identical epitaxy in some material systems, such as arsenides. The choice of one technique over the other for particular materials, processes, and markets is discussed...
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