Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has announced the production release of the EPC2050, a 350V GaN transistor with a maximum on-resistance (RDS(on)) of 80mΩ and a 26A pulsed output current. The EPC2050 measures just 1.95mm x 1.95mm, enabling power solutions to occupy ten times less area than comparable silicon solutions...
Source: http://www.semiconductor-today.com/news ... 0422.shtml