At the IEEE International Reliability Physics Symposium (IRPS 2025) in Monterey, CA, USA (30 March–3 April), nanoelectronics research center imec of Leuven, Belgium demonstrated that, despite their positive bias (on-state) instability, gallium nitride (GaN) MISHEMTs (metal-insulator-semiconductor high-electron-mobility transistors) maintain consistent performance when operating within a well-defined range. These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication...
Source: https://www.semiconductor-today.com/new ... 0425.shtml