As presented at the International Conference on Nitride Semiconductors (ICNS-15) in Malmö, Sweden (6–11 July) in a paper by Kouei Kubota et al, Japan’s Sumitomo Electric Industries Ltd — through joint research with the research group led by assistant professor Takuya Maeda of the University of Tokyo’s School of Engineering — has discovered the scattering mechanism of a two-dimensional electron gas (2DEG) in a heterojunction formed from scandium aluminium nitride (ScAlN) and gallium nitride (GaN). ScAlN/GaN is a strong candidate to be the barrier layer in next-generation high-frequency GaN high-electron-mobility transistors (GaN HEMTs)...
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