Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA and China-based Innoscience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 200mm silicon wafers — have signed a non-binding memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40–200V, and significantly broaden customer adoption...
Source: https://www.semiconductor-today.com/new ... 1225.shtml