In a preliminary determination, the US International Trade Commission (ITC) has found violation of one patent (US 9,899,481) owned by Infineon Technologies AG of Munich, Germany concerning gallium nitride (GaN) technology by China-based Innoscience (Suzhou) Technology Holding Co Ltd, which manufactures GaN-on-silicon power chips on 8” silicon wafers. In addition, the ITC confirmed that both patents asserted by Infineon in the proceedings before the ITC (US 9,899,481 and 9,070,755) are legally valid...
Source: https://www.semiconductor-today.com/new ... 1225.shtml