At the 71st IEEE International Electron Devices Meeting (IEDM 2025) in San Francisco on 10 December, Japan’s NTT Inc of Tokyo, Japan presented what it it claims is the first amplification of millimeter-wave high-frequency signals used in wireless communications in aluminium nitride (AlN)-based transistors (Kawasaki et al, ‘First RF Operation of AlGaN-channel Polarization-Doped FETs with Average Al-content Over 0.75’). It has achieved this by designing a low-resistance structure...
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