Tokyo-based Mitsubishi Electric Corp has developed a 200Gbps (112Gbaud four-level pulse-amplitude modulation (PAM4)) electro-absorption modulator laser diode (EML) chip that doubles the speed of the firm’s existing 100Gbps EML chip due to a proprietary hybrid waveguide structure. Support for coarse wavelength division multiplexing (CWDM) of four wavelengths realizes 800Gbps transmission using four chips or 1.6Tbps using eight chips...
Source: https://www.semiconductor-today.com/new ... 0323.shtml