Fabless semiconductor company Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — has launched the second series of its ICeGaN 650V gallium nitride high-electron-mobility transistor (HEMT) family...
Source: https://www.semiconductor-today.com/new ... 0523.shtml