SCT Transphorm demonstrating 99% efficiency power switching with 1200V GaN power transistor
Posted: Fri Feb 25, 2022 11:53 am
At the International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022) in Vancouver, Canada (22-26 May), Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — is to demonstrate R&D results from its 1200V GaN device...
Source: http://www.semiconductor-today.com/news ... 0222.shtml
Source: http://www.semiconductor-today.com/news ... 0222.shtml