SCT ST and Sanan creating 200mm SiC device fab JV in China

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SCT ST and Sanan creating 200mm SiC device fab JV in China

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STMicroelectronics of Geneva, Switzerland and China’s Sanan Optoelectronics Co Ltd — which manufactures LEDs, silicon carbide (SiC), optical communications, RF, filters and gallium nitride (GaN) products — have agreed to create a new 200mm silicon carbide device manufacturing joint venture (JV) in Chongqing, China...

Source: https://www.semiconductor-today.com/new ... 0623.shtml
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