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Guerrilla RF Inc (GRF) of Greensboro, NC, USA — a provider of radio-frequency (RF) and microwave communication solutions for wireless OEMs — is sampling the GRF2176, a high-gain, two-stage pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) with built-in bypass functionality. As with other bypass-capable devices in its portfolio, the LNA leverages patented Guerrilla Armor technology, which prevents amplifiers from turning on in the presence of large RF input signals — a critical requirement for guaranteeing exceptional stage isolation and minimal impact on a device’s on-state performance...

Source: https://www.semiconductor-today.com/new ... 0623.shtml