SCT Toshiba expands range of 3300V SiC MOSFET modules

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SCT Toshiba expands range of 3300V SiC MOSFET modules

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Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has expanded its lineup of chopper SiC MOSFET modules by launching the MG800FXF1ZMS3 and MG800FZF1JMS3, which have ratings of 3300V and 800A using third-generation silicon carbide (SiC) MOSFET and Schottky barrier diode SBD chips for industrial equipment...

Source: https://www.semiconductor-today.com/new ... 1223.shtml
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