Gallium nitride (GaN) power devices have been successfully adopted in several power applications, starting with lateral GaN devices. After the release of its new GaN electronics IP report, technology intelligence and IP strategy consulting company KnowMade discusses the status of vertical GaN device technology in the power GaN patent landscape. With the potential to overcome breakdown voltage and current capacity limitations of lateral devices, while alleviating some thermal issues, vertical GaN is seen as a promising technology for the next generation of power devices...
Source: https://www.semiconductor-today.com/new ... 1223.shtml