Power semiconductor maker ROHM says that its new GNE10xxTB series of 150V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) increases the gate withstand voltage (rated gate-source voltage) to what is claimed to be an industry-leading 8V – ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with Internet of Things (IoT) communication devices...
Source: http://www.semiconductor-today.com/news ... 0322.shtml