SCT Fraunhofer IAF presents 1200V GaN HEMTs at PCIM Europe
Posted: Mon Jun 17, 2024 12:42 pm
At Power, Control and Intelligent Motion (PCIM) Europe 2024 in Nuremberg (11–13 June), Fraunhofer Institute for Applied Solid State Physics (IAF) of Freiburg, Germany presented the current state of its development of novel technologies for lateral and vertical gallium nitride (GaN) transistors with blocking voltages above 1200V...
Source: https://www.semiconductor-today.com/new ... 0624.shtml
Source: https://www.semiconductor-today.com/new ... 0624.shtml