WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — has announced the beta release of its PP10-29 moisture rugged 0.1µm pseudomorphic high-electron-mobility transistor (pHEMT) technology...
Source: https://www.semiconductor-today.com/new ... 0624.shtml