Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — is sampling the GRF2113, a next-generation variant of its GRF2013 gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) amplifier core. The gain of this new variant surpasses that of its predecessor by up to 3.5dB, providing extra headroom in wireless infrastructure receive and transmit setups where marginal cascaded gain is a concern...
Source: https://www.semiconductor-today.com/new ... 0624.shtml