At the 2022 IEEE International Reliability Physics Symposium (IRPS) in Dallas, TX, USA (27-31 March), a team from STMicroelectronics and the Institute for Microelectronics and Microsystems at the National Research Council of Italy (Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi, CNR-IMM) in Catania, Italy, was recognized with the IRPS 2021 ‘best paper’ award for ‘Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects’, which exposed newly discovered relations between certain defects and the viability of silicon carbide (SiC) power devices...
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