Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) is expanding its 200mm-wafer volume production of silicon carbide (SiC) and gallium nitride (GaN) power devices by placing a follow-up order for G10-SiC chemical vapor deposition (CVD) systems, complemented by another order for G10-GaN metal-organic chemical vapor deposition (MOCVD) systems, from deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany...
Source: https://www.semiconductor-today.com/new ... 0724.shtml