STMicroelectronics of Geneva, Switzerland is introducing its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, which is claimed to bring new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new Generation 4 technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains. The firm plans to introduce further SiC technology innovations through 2027...
Source: https://www.semiconductor-today.com/new ... 0924.shtml