SCT imec reports first full wafer-scale fabrication of electrically pumped GaAs-based nano-ridge lasers on 300mm silicon
Posted: Thu Jan 09, 2025 4:20 pm
Nanoelectronics research center imec of Leuven, Belgium has demonstrated electrically driven gallium arsenide (GaAs)-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5mA and output powers exceeding 1mW, the results are said to demonstrate the potential of direct epitaxial growth of high-quality III-V materials on silicon (‘GaAs nano-ridge laser diodes fully fabricated in a 300mm CMOS pilot line’, Yannick De Koninck et al, Nature, volume 637, pages 63–69 (2025)). imec reckons that this provides a pathway to the development of cost-effective, high-performance optical devices for applications in data communications, machine learning and artificial intelligence...
Source: https://www.semiconductor-today.com/new ... 0125.shtml
Source: https://www.semiconductor-today.com/new ... 0125.shtml