SCT Navitas’ new 1200V SiCPAK power modules enable high reliability and efficient high-temperature performance

Post Reply
admin
Site Admin
Articles: 0
Posts: 3899
Joined: Sat Jul 11, 2026 7:10 pm

SCT Navitas’ new 1200V SiCPAK power modules enable high reliability and efficient high-temperature performance

Post by admin »

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has released its latest SiCPAK power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include electric vehicle (EV) DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating...

Source: https://www.semiconductor-today.com/new ... 0425.shtml
Post Reply