SCT Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Posted: Mon Apr 28, 2025 8:19 am
Novel Crystal Technology Inc (NCT) of Saitama, Japan has developed a gallium oxide vertical MOS transistor (β-Ga2O3 MOSFET) with a record power figure of merit (PFOM, VBR2/Ron,SP) of 1.23GW/cm2, 3.2 times higher than the previous record (presented at the 72nd Japan Society of Applied Physics (JSAP) Spring Meeting 2025 on 15 March)...
Source: https://www.semiconductor-today.com/new ... 0425.shtml
Source: https://www.semiconductor-today.com/new ... 0425.shtml