SCT Fraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes
Posted: Wed Apr 30, 2025 8:34 am
At the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg (6–8 May), Fraunhofer Institute for Applied Solid State Physics IAF of Freiburg, Germany is presenting results achieved as part of the three-year project ‘GaN4EmoBiL — GaN power semiconductors for electro-mobility and system integration through bidirectional charging’ launched in mid-2023 and funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK)...
Source: https://www.semiconductor-today.com/new ... 0425.shtml
Source: https://www.semiconductor-today.com/new ... 0425.shtml