Imec of Leuven, Belgium has unveiled a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode) device operating at low supply voltage. In parallel, the firm also demonstrated a record-low contact resistance of 0.024Ω·mm, which is essential to further boost output power in future designs. Imec says that the results mark a crucial step toward integrating GaN technology into next-gen mobile devices, particularly those targeting the 6G FR3 band between 7 and 24GHz. The results are being presented at the 2025 Symposium on VLSI Technology and Circuits in Kyoto, Japan, June 8-12...
Source: https://www.semiconductor-today.com/new ... 0625.shtml