On 21 January, Tokyo-based Mitsubishi Electric Corp will starting shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) bare dies designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power. The new power semiconductor bare dies will contribute to efforts to embed advanced bare dies in various power electronics equipment to lower power consumption while maintaining performance...
Source: https://www.semiconductor-today.com/new ... 0126.shtml