Renesas Electronics Corp of Tokyo, Japan has introduced what is claimed to be the industry’s first bidirectional switch using depletion-mode (d-mode) GaN technology, capable of blocking both positive and negative currents in a single device with integrated DC blocking. Targeting single-stage solar micro-inverters, AI data centers and onboard electric vehicle chargers, the high-voltage TP65B110HRU simplifies power converter designs and replaces conventional back-to-back FET switches with a single low-loss, fast-switching, easy-to-drive device...
Source: https://www.semiconductor-today.com/new ... 0326.shtml