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Researchers from San Jose State University and Sandia National Laboratories published a technical paper titled “Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques.” Abstract Excerpt: “In addition to the traditional bottom dielectric isolation (BDI), which isolates the source/drain (S/D) from the substrate (dubbed SD-BDI), and the punch-through stopper (PTS), a novel channel-BDI (C-BDI) is proposed, allowing S/D-to-substrate connection.” The paper also reports that “all structures are immune to the alpha-particle SEU, and BDI enhances the radiation hardness substantially.” Find the technical paper here. July 2026. Lu, Albert, Junipero Verbeke, Phil Oldiges, Reza Arghavani, and Hiu Yung Wong. “Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques.” arXiv, July 2026. https://doi.org/10.48550/arXiv.2607.05789.     The post 3nm GAA-FET SRAM Review Evaluates Self-Heating And Radiation Hardness (SJSU, Sandia) appeared first on Semiconductor Engineering.

Source: https://semiengineering.com/3nm-gaa-fet ... su-sandia/