Researchers from Stanford University and Hanyang University published a technical paper titled “Bridging the p-type gap in oxide electronics with 2D semiconductors.” “The review assesses manufacturing-aligned pathways to high-performance 2D p-channel transistors, covering transfer-free low-temperature growth, clean van der Waals contacts, gentle p-doping, and mitigation of crystallization, volatility, and interdiffusion,” and also “a pragmatic outlook for BEOL p-type 2D semiconductors is outlined toward manufacturable, dense, low-power monolithic 3D chips.” Find the technical paper here. July 2026. Kim, T., Hwang, S. & Jeong, J.K. Bridging the p-type gap in oxide electronics with 2D semiconductors. Commun Eng 5, 124 (2026). https://doi.org/10.1038/s44172-026-00723-3 The post 2D P-Type Semiconductors with Oxide N-Channel Transistors For Complementary BEOL CMOS (Stanford, Hanyang) appeared first on Semiconductor Engineering.
Source: https://semiengineering.com/2d-p-type-s ... d-hanyang/