Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7018, a 100V, 3.9mΩ, 345APulsed, radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small 13.9mm2 footprint...
Source: http://www.semiconductor-today.com/news ... 0622.shtml