By using a unique technique for doping gallium nitride (GaN) in a controlled way, researchers at North Carolina State University (NC State) and spin-off Adroit Materials Inc of Cary, NC, USA plus the Institute of High-Pressure Physics at the Polish Academy of Sciences have created new high-power electronic devices that are said to be more energy efficient than previous technologies...
Source: https://www.semiconductor-today.com/new ... 0922.shtml