SCT EPC adds 80V, 11mΩ, AEC-Q101-qualified GaN FET

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SCT EPC adds 80V, 11mΩ, AEC-Q101-qualified GaN FET

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Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has expanded its range of automotive, off-the-shelf GaN transistors with the introduction of the 80V, 11mΩ EPC2252, which delivers 75A pulsed current in a 1.5mm x 1.5mm footprint...

Source: https://www.semiconductor-today.com/new ... 0123.shtml
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