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Fabless semiconductor company Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 by CEO Dr Giorgia Longobardi and professor Florin Udrea and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates — says that independent, third-party research by Virginia Tech University has demonstrated that its ICeGaN gallium nitride technology is more reliable and robust than other GaN platforms. Presented by researchers from Virginia Tech and CGD’s director of Innovation & Research Daniel Popa at the Applied Power Electronics Conference...

Source: https://www.semiconductor-today.com/new ... 0323.shtml